共 50 条
Flexible and degradable resistive switching memory fabricated with sodium alginate
被引:0
|作者:
李壮壮
[1
]
严梓洋
[1
]
许嘉琪
[1
]
张晓晗
[1
]
凡井波
[1
]
林亚
[1
]
王中强
[1
,2
]
机构:
[1] Department of Physics, Northeast Normal University
[2] National Demonstration Center for Experimental Physics Education, Northeast Normal University
基金:
中国国家自然科学基金;
中央高校基本科研业务费专项资金资助;
中国博士后科学基金;
关键词:
D O I:
暂无
中图分类号:
TP333 [存贮器];
学科分类号:
081201 ;
摘要:
Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem,due to its physically vanishing ability in solution.Here in this work,we demonstrate a flexible and degradable transient resistive switching(RS) memory device with simple structure of Cu/sodium alginate(SA)/ITO.The device presents excellent RS characteristics as well as high flexibility,including low operating voltage(<1.5 V) and multilevel RS behavior.No performance degradation occurs after bending the device 50 times.Moreover,our device can be absolutely dissolved in deionized water.The proposed SA-based transient memory device has great potential for the development of green and security memory devices.
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页码:558 / 562
页数:5
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