Flexible and thermally stable resistive switching memory in a Ta/TaOx/stainless steel structure

Flexible and thermally stable resistive switching (RS) behaviors were studied based on a Ta/TaOx/stainless steel (SS) structure. This memory device demonstrates good mechanical endurance and information retention using the amorphous characteristic of TaOx. In addition, a 500 degrees C thermal annealing treatment when applied to a Ta/TaOx/SS memory device can effectively improve its thermal stability, and especially its resistance retention properties. Stable and flexible RS behaviors were observed at a test temperature of 200 degrees C for the memory device annealed at 500 degrees C. The improved thermal stability may be attributed to the formation of an amorphous-nanocrystalline mixed structure in the annealed TaO(x)film, preventing degradation of the resistance state. The presented RS behavior, with remarkable flexibility and thermal tolerance has potential applications in harsh environments, such as high-temperature flexible electronic devices.