Impact of High-κ TaOx Thickness on the Switching Mechanism of Resistive Memory Device Using IrOx/TaOx/WOx/W Structure

被引：3

作者：

Prakash, A. ^{[1
]}

Maikap, S. ^{[1
]}

Chen, W. S.

Lee, H. Y.

Chen, F. T.

Kao, M. -J.

Tsai, M. -J.

机构：

[1] Chang Gung Univ, Thin Film Nano Tech Lab, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES | 2012年 / 45卷 / 03期

关键词：

D O I：

10.1149/1.3700903

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrOx/TaOx/W fabricated. The formation of amorphous TaOx and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >10(3) at 85 degrees C is obtained.

引用

页码：379 / 385

页数：7

共 50 条

[1] Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
Prakash, Amit
Maikap, Siddheswar
Lai, Chao Sung
Lee, Heng Yuan
Chen, W. S.
Chen, Frederick T.
Kao, Ming Jer
Tsai, Ming Jinn
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
[2] Bipolar resistive switching memory using bilayer TaOx/WOx films
Prakash, A.
Maikap, S.
Lai, C. S.
Tien, T. C.
Chen, W. S.
Lee, H. Y.
Chen, F. T.
Kao, M. -J.
Tsai, M. -J.
SOLID-STATE ELECTRONICS, 2012, 77 : 35 - 40
[3] Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure
Prakash, Amit
Maikap, Siddheswar
Lee, H. Y.
Chen, G.
Chen, F.
Tsai, Min-Jing
Kao, M-J.
MICRO NANO DEVICES, STRUCTURE AND COMPUTING SYSTEMS, 2011, 159 : 333 - +
[4] Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Prakash, Amit
Maikap, Siddheswar
Chiu, Hsien-Chin
Tien, Ta-Chang
Lai, Chao-Sung
NANOSCALE RESEARCH LETTERS, 2014, 9
[5] Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Amit Prakash
Siddheswar Maikap
Hsien-Chin Chiu
Ta-Chang Tien
Chao-Sung Lai
Nanoscale Research Letters, 9
[6] Improved resistive switching memory performance using novel W/TaOx/TiOxN/TiN structure
Prakash, A.
Maikap, S.
Chen, W. S.
Lee, H. Y.
Chen, F. T.
Kao, M. -J.
Tsai, M. -J.
2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), 2013,
[7] Retracted: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Prakash A.
Maikap S.
Chiu H.-C.
Tien T.-C.
Lai C.-S.
Nanoscale Research Letters, 9 (1):
[8] Improved Resistance Memory Characteristics and Switching Mechanism Using TiN Electrode on TaOx/W Structure
Prakash, A.
Maikap, S.
PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC), 2013, : 136 - 138
[9] Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Amit Prakash
Siddheswar Maikap
Hsien-Chin Chiu
Ta-Chang Tien
Chao-Sung Lai
Nanoscale Research Letters, 8
[10] Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
Amit Prakash
Siddheswar Maikap
Writam Banerjee
Debanjan Jana
Chao-Sung Lai
Nanoscale Research Letters, 8

← 1 2 3 4 5 →