Impact of High-κ TaOx Thickness on the Switching Mechanism of Resistive Memory Device Using IrOx/TaOx/WOx/W Structure

被引：3
|
作者：
Prakash, A. [1 ]
Maikap, S. [1 ]
Chen, W. S.
Lee, H. Y.
Chen, F. T.
Kao, M. -J.
Tsai, M. -J.
机构：
[1] Chang Gung Univ, Thin Film Nano Tech Lab, Dept Elect Engn, Tao Yuan 333, Taiwan
来源：
DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES | 2012年 / 45卷 / 03期
关键词：
D O I：
10.1149/1.3700903
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrOx/TaOx/W fabricated. The formation of amorphous TaOx and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >10(3) at 85 degrees C is obtained.
引用
收藏
页码：379 / 385
页数：7
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