Impact of High-κ TaOx Thickness on the Switching Mechanism of Resistive Memory Device Using IrOx/TaOx/WOx/W Structure

被引：3

作者：

Prakash, A. ^{[1
]}

Maikap, S. ^{[1
]}

Chen, W. S.

Lee, H. Y.

Chen, F. T.

Kao, M. -J.

Tsai, M. -J.

机构：

[1] Chang Gung Univ, Thin Film Nano Tech Lab, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES | 2012年 / 45卷 / 03期

关键词：

D O I：

10.1149/1.3700903

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrOx/TaOx/W fabricated. The formation of amorphous TaOx and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >10(3) at 85 degrees C is obtained.

引用

页码：379 / 385

页数：7

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