Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

被引：36

作者：

Wang, Hongjun ^{[1
,2
]}

Zou, Changwei ^{[3
]}

Zhou, Lin ^{[1
,2
]}

Tian, Canxin ^{[1
,2
]}

Fu, Dejun ^{[1
,2
]}

机构：

[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Minist Educ, Key Lab Acoust Photon Mat & Devices, Wuhan 430072, Peoples R China

[3] Zhanjiang Normal Univ, Dept Phys, Zhanjiang 524037, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2012年 / 91卷

基金：

中国国家自然科学基金;

关键词：

Resistance switching; Nonvolatile memory; RRAM; NiO;

D O I：

10.1016/j.mee.2011.05.037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flexible resistive switching device consisting of thin NiO film sandwiched between a flexible Cu foil substrate and Ti top electrode is proposed in this work. The Ti/NiO/Cu structure was fabricated by radio frequency magnetron sputtering deposition of a NiO film on the flexible Cu foil substrate. The fabricated device showed stable bipolar resistive switching behavior and its performance was not degraded upon different bending states. The Ti/NiO/Cu flexible device presented in our work has potential applications in the field of resistive switching random access memory (RRAM) devices. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：144 / 146

页数：3

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