A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

被引：56
|
作者：
Sun, Bai [1 ,2 ]
Zhang, Xuejiao [3 ]
Zhou, Guangdong [5 ]
Yu, Tian [4 ]
Mao, Shuangsuo [1 ,2 ]
Zhu, Shouhui [1 ,2 ]
Zhao, Yong [1 ,2 ]
Xia, Yudong [1 ,2 ]
机构：
[1] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China
[2] Southwest Jiaotong Univ, Superconduct & New Energy R&D Ctr SNERDC, Minist Educ China, Key Lab Magnet Levitat Technol & Maglev Trains, Chengdu 610031, Sichuan, Peoples R China
[3] Hebei North Univ, Coll Lab Med, Zhangjiakou 075000, Peoples R China
[4] Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610064, Sichuan, Peoples R China
[5] Southwest Univ, ICEAM, Chongqing 400715, Peoples R China
来源：
JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2018年 / 520卷
基金：
中国国家自然科学基金;
关键词：
ZnO film; PET substrate; Flexible; Nonvolatile; Memory device; ASSISTED CONDUCTIVE FILAMENT; BEHAVIOR; NANOFIBERS;
D O I：
10.1016/j.jcis.2018.03.001
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good "write-rea d-erase-read" stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM). (C) 2018 Elsevier Inc. All rights reserved.
引用
收藏
页码：19 / 24
页数：6
相关论文
共 50 条
  • [1] Non-volatile resistive switching memory device based on ZnO-graphene oxide embedded in a polymer matrix fabricated on a flexible PET substrate
    Hmar, Jehova Jire L.
    MICROELECTRONIC ENGINEERING, 2020, 233
  • [2] Graphene-oxide-based resistive switching device for flexible nonvolatile memory application
    Lin, Chun-Chieh
    Wu, Hsiao-Yu
    Lin, Nian-Cin
    Lin, Chu-Hsuan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
  • [3] Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices
    Wang, Hongjun
    Zou, Changwei
    Zhou, Lin
    Tian, Canxin
    Fu, Dejun
    MICROELECTRONIC ENGINEERING, 2012, 91 : 144 - 146
  • [4] Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
    Lee, Seunghyup
    Kim, Heejin
    Yun, Dong-Jin
    Rhee, Shi-Woo
    Yong, Kijung
    APPLIED PHYSICS LETTERS, 2009, 95 (26)
  • [5] Nonvolatile resistive switching memory based on monosaccharide fructose film
    Xing, Yuan
    Sueoka, Brandon
    Cheong, Kuan Yew
    Zhao, Feng
    APPLIED PHYSICS LETTERS, 2021, 119 (16)
  • [6] S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device
    Moudgil, Akshay
    Kalyani, Neeti
    Sinsinbar, Gaurav
    Das, Samaresh
    Mishra, Prashant
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (05) : 4866 - 4873
  • [7] Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films
    Kang, Youn Hee
    Choi, Ji-Hyuk
    Lee, Tae Il
    Lee, Woong
    Myoung, Jae-Min
    SOLID STATE COMMUNICATIONS, 2011, 151 (23) : 1739 - 1742
  • [8] Flexible Nanoscale Memory Device Based on Resistive Switching in Nickel Oxide Thin Film
    Yu, Q.
    Lim, W. M.
    Hu, S. G.
    Chen, T. P.
    Deng, L. J.
    Liu, Y.
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2012, 4 (09) : 940 - 943
  • [9] Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2 film grown on Cu foil substrate for flexible nonvolatile memory device
    Wang, Hongjun
    Zhu, Yuanyuan
    Fu, Dejun
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 695 : 2669 - 2671
  • [10] An organic nonvolatile resistive switching memory device fabricated with natural pectin from fruit peel
    Sun, Bai
    Zhang, Xin
    Zhou, Guangdong
    Li, Pingyuan
    Zhang, Yong
    Wang, Hongyan
    Xia, Yudong
    Zhao, Yong
    ORGANIC ELECTRONICS, 2017, 42 : 181 - 186
12345