Flexible and degradable resistive switching memory fabricated with sodium alginate

被引:0
|
作者
李壮壮 [1 ]
严梓洋 [1 ]
许嘉琪 [1 ]
张晓晗 [1 ]
凡井波 [1 ]
林亚 [1 ]
王中强 [1 ,2 ]
机构
[1] Department of Physics, Northeast Normal University
[2] National Demonstration Center for Experimental Physics Education, Northeast Normal University
基金
中国国家自然科学基金; 中央高校基本科研业务费专项资金资助; 中国博士后科学基金;
关键词
D O I
暂无
中图分类号
TP333 [存贮器];
学科分类号
081201 ;
摘要
Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem,due to its physically vanishing ability in solution.Here in this work,we demonstrate a flexible and degradable transient resistive switching(RS) memory device with simple structure of Cu/sodium alginate(SA)/ITO.The device presents excellent RS characteristics as well as high flexibility,including low operating voltage(<1.5 V) and multilevel RS behavior.No performance degradation occurs after bending the device 50 times.Moreover,our device can be absolutely dissolved in deionized water.The proposed SA-based transient memory device has great potential for the development of green and security memory devices.
引用
收藏
页码:558 / 562
页数:5
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