user

EFFECTS OF MISFIT DISLOCATIONS AND THERMALLY INDUCED STRAIN ON THE FILM PROPERTIES OF HETEROEPITAXIAL GAAS ON SI

被引：37
|
作者：
LUM, RM [1 ]
KLINGERT, JK [1 ]
BYLSMA, RB [1 ]
GLASS, AM [1 ]
MACRANDER, AT [1 ]
HARRIS, TD [1 ]
LAMONT, MG [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 12期
关键词：
D O I：
10.1063/1.342004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6727 / 6732
页数：6
相关论文
共 50 条
  • [1] EFFECTS OF MISFIT DISLOCATIONS AND THERMALLY INDUCED STRAIN ON THE FILM PROPERTIES OF HETEROEPITAXIAL GAAS ON SI
    LUM, RM
    KLINGERT, JK
    BYLSMA, RB
    GLASS, AM
    MACRANDER, AT
    HARRIS, TD
    LAMONT, MG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C379 - C379
  • [2] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE
    ABRAHAMS, MS
    BUIOCCHI, CJ
    CORBOY, JF
    CULLEN, GW
    APPLIED PHYSICS LETTERS, 1976, 28 (05) : 275 - 277
  • [3] Strain relaxation in GaAs on Si by two groups of misfit dislocations
    Tamura, M
    Saitoh, T
    Yodo, T
    EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 437 - 442
  • [4] ASYMMETRY OF MISFIT DISLOCATIONS IN HETEROEPITAXIAL LAYERS ON (001) GAAS SUBSTRATES
    BARTELS, WJ
    NIJMAN, W
    JOURNAL OF CRYSTAL GROWTH, 1977, 37 (03) : 204 - 214
  • [5] STRAIN-RELIEF MECHANISMS AND NATURE OF MISFIT DISLOCATIONS IN GAAS/SI HETEROSTRUCTURES
    SHARAN, S
    NARAYAN, J
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 113 : 57 - 63
  • [6] GENERATION OF MISFIT DISLOCATIONS IN GAAS GROWN ON SI
    TSAI, HL
    MATYI, RJ
    APPLIED PHYSICS LETTERS, 1989, 55 (03) : 265 - 267
  • [7] Two groups of misfit dislocations in GaAs on Si
    Tamura, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 63 (04): : 359 - 370
  • [8] MISFIT DISLOCATIONS IN GAAS HETEROEPITAXY ON (001)SI
    GERTHSEN, D
    BIEGELSEN, DK
    PONCE, FA
    TRAMONTANA, JC
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (2-3) : 157 - 165
  • [9] Two groups of misfit dislocations in GaAs on Si
    Tamura, M.
    Applied Physics A: Materials Science and Processing, 1996, 63 (04): : 359 - 370
  • [10] CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY
    STOLZ, W
    HORIKOSHI, Y
    NAGANUMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1140 - L1143
12345