EFFECTS OF MISFIT DISLOCATIONS AND THERMALLY INDUCED STRAIN ON THE FILM PROPERTIES OF HETEROEPITAXIAL GAAS ON SI

被引：37

作者：

LUM, RM ^{[1
]}

KLINGERT, JK ^{[1
]}

BYLSMA, RB ^{[1
]}

GLASS, AM ^{[1
]}

MACRANDER, AT ^{[1
]}

HARRIS, TD ^{[1
]}

LAMONT, MG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.342004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6727 / 6732

页数：6

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