EFFECTS OF MISFIT DISLOCATIONS AND THERMALLY INDUCED STRAIN ON THE FILM PROPERTIES OF HETEROEPITAXIAL GAAS ON SI

被引：37
|
作者：
LUM, RM [1 ]
KLINGERT, JK [1 ]
BYLSMA, RB [1 ]
GLASS, AM [1 ]
MACRANDER, AT [1 ]
HARRIS, TD [1 ]
LAMONT, MG [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 12期
关键词：
D O I：
10.1063/1.342004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6727 / 6732
页数：6
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