ASYMMETRY OF MISFIT DISLOCATIONS IN HETEROEPITAXIAL LAYERS ON (001) GAAS SUBSTRATES

被引：41
|
作者：
BARTELS, WJ [1 ]
NIJMAN, W [1 ]
机构：
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
来源：
JOURNAL OF CRYSTAL GROWTH | 1977年 / 37卷 / 03期
关键词：
D O I：
10.1016/0022-0248(77)90115-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：204 / 214
页数：11
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