DIFFUSION OF ION-IMPLANTED SN AND SB IN HEAVILY DOPED N-TYPE SILICON

被引：19
|
作者：
ANDERSEN, PE [1 ]
LARSEN, AN [1 ]
TIDEMANDPETERSSON, P [1 ]
WEYER, G [1 ]
机构：
[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期
关键词：
D O I：
10.1063/1.99823
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：755 / 757
页数：3
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