DIFFUSION OF ION-IMPLANTED SN AND SB IN HEAVILY DOPED N-TYPE SILICON

被引：19

作者：

ANDERSEN, PE ^{[1
]}

LARSEN, AN ^{[1
]}

TIDEMANDPETERSSON, P ^{[1
]}

WEYER, G ^{[1
]}

机构：

[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.99823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：755 / 757

页数：3

共 50 条

[21] Some transport coefficients in heavily doped n-type silicon
Elfagd, Y
Workalemahu, B
Sharma, SK
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 227 (02): : 549 - 555
[22] ORBACH RELAXATION PROCESS IN HEAVILY DOPED N-TYPE SILICON
OCHIAI, Y
MATSUURA, E
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02): : K109 - K112
[23] MEASUREMENT OF HOLE MOBILITY IN HEAVILY DOPED N-TYPE SILICON
SWIRHUN, SE
DELALAMO, JA
SWANSON, RM
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 168 - 173
[24] PIEZORESISTANCE AND MAGNETIC SUSCEPTIBILITY IN HEAVILY DOPED N-TYPE SILICON
SASAKI, W
KINOSHITA, J
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 25 (06) : 1622 - +
[25] The potential of heavily doped n-type silicon in plasmonic sensors
Das Joy, Joyonta
Rahman, Md. Shakibur
Rahad, Rummanur
Chowdhury, Mehdi Hasan
MEASUREMENT, 2025, 242
[26] MEASUREMENT OF HOLE DIFFUSION LENGTH IN HEAVILY-DOPED N-TYPE SILICON USING SEM
TYAGI, MS
GUPTA, AK
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 143 (01): : 79 - 83
[27] CLUSTERING, PRECIPITATION AND DIFFUSION IN ION-IMPLANTED SILICON
BENNETT, DJ
PRICE, TE
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (01) : 5 - 9
[28] DIFFUSION OF ION-IMPLANTED SB IN SIO2
VANOMMEN, AH
JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 993 - 997
[29] THE DIFFUSION OF ION-IMPLANTED BORON IN SILICON DIOXIDE
NG, J
GIBBONS, JF
SIGMON, T
AIP CONFERENCE PROCEEDINGS, 1984, (122) : 20 - 33
[30] Characterization of ion-implanted gallium diffusion in silicon
Sato, Y., 1600, Japan Society of Applied Physics (43):

← 1 2 3 4 5 →