Some transport coefficients in heavily doped n-type silicon

被引：0

作者：

Elfagd, Y ^{[1
]}

Workalemahu, B ^{[1
]}

Sharma, SK ^{[1
]}

机构：

[1] Univ Addis Ababa, Dept Phys, Addis Ababa, Ethiopia

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 227卷 / 02期

关键词：

D O I：

10.1002/1521-3951(200110)227:2<549::AID-PSSB549>3.0.CO;2-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper we have derived explicit expressions for some of the important galvanomagnetic transport coefficients. viz, the drift mobility, the Hall coefficient, and the coefficient of transverse magnetoresistance in heavily doped n-type silicon taking into account the effect of band tails. These expressions ire then used to calculate the transport coefficients for various donor concentrations from 1 x 10(18) to 2 x 10(20) cm(-3) at 300 K. Our calculations show that taking into account the effect of conduction band tails results in lowering the values of the transport coefficients by as much as 30-50% than those obtained by neglecting the effect of band tails.

引用

页码：549 / 555

页数：7

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