SUPPRESSION OF THERMAL DONOR FORMATION IN HEAVILY DOPED N-TYPE SILICON

被引：7
|
作者：
WADA, K
INOUE, N
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期
关键词：
D O I：
10.1063/1.335248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：5145 / 5147
页数：3
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