DIFFUSION OF LUMINESCENCE-CENTERS IN HEAVILY DOPED N-TYPE GAAS

被引：0
|
作者：
VOROBKALO, FM [1 ]
GLINCHUK, KD [1 ]
GAPCHIN, BK [1 ]
PROKHOROVICH, AV [1 ]
机构：
[1] ACAD SCI UKSSR, SEMICOND INST, KIEV, UKSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 10期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1370 / 1371
页数：2
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