DEVICE PROCESS DEPENDENCE OF LOW-FREQUENCY NOISE IN GAALAS/GAAS HETEROSTRUCTURE

被引：17
|
作者：
TACANO, M
SUGIYAMA, Y
SOGA, H
机构：
来源：
SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 01期
关键词：
D O I：
10.1016/0038-1101(89)90047-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：49 / 55
页数：7
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