Deep levels and low-frequency noise in AlGaAs/GaAs heterostructures

被引：15
|
作者：
Khlil, R
El Hdiy, A
Jin, Y
机构：
[1] Univ Reims, LMEN, EA 3799, F-51687 Reims, France
[2] CNRS, LPN, UPR20, F-91460 Marcoussis, France
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 09期
关键词：
D O I：
10.1063/1.2126155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The low-frequency noise is studied in different AlGaAs/GaAs heterostructures under electric biases as a function of the temperature. The heterostructures differ in the two-dimensional electron-gas density and the mobility. In addition to the thermal noise, different contributions are found and characterized (1/f and generation-recombination noises). The presence of the generation-recombination noise is linked to defects in the interface between the channel and electrical contacts. Thermal activation energy values are deduced from Arrhenius plots and related to As-Ga antisite defects and DX centers. The 1/f noise is also characterized and its origin is identified as being the carrier mobility fluctuation dominated by lattice phonons. (c) 2005 American Institute of Physics.
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页数：4
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