Deep levels in MBE grown AlGaAs/GaAs heterostructures

被引：12

作者：

Cavallini, A

Fraboni, B

Capotondi, F

Sorba, L

Biasiol, G

机构：

[1] Univ Bologna, INFM, I-40127 Bologna, Italy

[2] Univ Bologna, Dept Phys, I-40127 Bologna, Italy

[3] Univ Modena, Dipartimento Fis, I-43100 Parma, Italy

[4] INFM, Lab Nazl TASC, Area Ric, I-34012 Trieste, Italy

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

deep level; HEMT; current-DLTS; charge trapping processes;

D O I：

10.1016/j.mee.2004.03.081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the deep levels in modulation-doped GaAs/Al0.33Ga0.67As heterostructures grown on (0 0 1) GaAs substrates with a high-mobility two-dimensional electron gas (2DEG), by means of current-mode deep level transient spectroscopy (I-DLTS). Five major traps have been identified and their effect on the 2DEG electron mobility and density has been assessed by comparing results from devices grown with different As/Ga ratios (25, 40 and 48). Two so-called "hole-like" traps have also been observed and we suggest they are linked to the different threshold voltages observed in the different devices studied. By utilizing different polarization conditions we were able to assign an origin to some of the traps and to advance hypotheses on their localization within the GaAs/Al0.33Ga0.67As heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：954 / 959

页数：6

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