Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

被引：39
|
作者：
Balandin, A [1 ]
机构：
[1] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 10期
关键词：
D O I：
10.1049/el:20000680
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regions. Analysis of experimental data for different transistors indicates that for all examined biases the noise spectrum is dominated by the channel noise rather than noise originating in the series resistors. The obtained results shed new light on the noise sources and may lead to improvements in the noise performance of GaN transistors.
引用
收藏
页码：912 / 913
页数：2
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