Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

被引：21

作者：

Kayis, Cemil ^{[1
]}

Leach, Jacob H. ^{[1
]}

Zhu, C. Y. ^{[1
]}

Wu, Mo ^{[1
]}

Li, X. ^{[1
]}

Ozgur, Umit ^{[1
]}

Morkoc, Hadis ^{[1
]}

Yang, X. ^{[2
]}

Misra, Veena ^{[2
]}

Handel, Peter H. ^{[3
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[3] Univ Missouri, Dept Phys & Astron, St Louis, MO 63121 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

关键词：

Gate dielectric; generation-recombination (G-R); metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET); noise measurement; QUALITY;

D O I：

10.1109/LED.2010.2055823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the low-frequency phase-noise measurements of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors employing HfAlO as the gate dielectric. Some devices tested exhibited noise spectra deviating from the well-known 1/f(gamma) spectrum. These devices showed broad peaks in the noise spectral density versus frequency plots, which shifted toward higher frequencies at elevated temperatures. The temperature dependence of the frequency position of this peak allowed us to determine the energy level of these excess traps as 0.22 +/- 0.06 eV below the conduction band for the bias conditions employed.

引用

页码：1041 / 1043

页数：3

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