Low-frequency noise in AlGaN/GaN heterostructure field effect transistors and metal oxide semiconductor reterostructure field effect transistors

The dependence of the 1/f noise on 2D electron concentration in the channel n(Ch) of AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors has been studied and compared. The dependencies of Hooge parameter alpha(Ch) for the noise sources located in the channel of the transistors on sheet electron concentration are found identical for both types of devices. The increase of the Hooge parameter alpha(Ch) with the decrease of the channel concentration observed in both types of devices confirms that the noise sources are located in the region under the gate in the AlGaN/GaN heterostructure and that electron tunneling from the 2D electron gas into the traps in GaN or AlGaN layers is a probable noise mechanism.