首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
TAPERED WINDOWS IN SIO2 BY ION-IMPLANTATION
被引:23
|
作者
:
MOLINE, RA
论文数:
0
引用数:
0
h-index:
0
MOLINE, RA
BUCKLEY, RR
论文数:
0
引用数:
0
h-index:
0
BUCKLEY, RR
HASZKO, SE
论文数:
0
引用数:
0
h-index:
0
HASZKO, SE
MACRAE, AU
论文数:
0
引用数:
0
h-index:
0
MACRAE, AU
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1973年
/ ED20卷
/ 09期
关键词
:
D O I
:
10.1109/T-ED.1973.17753
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:840 / 840
页数:1
相关论文
共 50 条
[1]
TAPERED WINDOWS IN PHOSPHORUS-DOPED SIO2 BY ION-IMPLANTATION
NORTH, JC
论文数:
0
引用数:
0
h-index:
0
NORTH, JC
MCGAHAN, TE
论文数:
0
引用数:
0
h-index:
0
MCGAHAN, TE
RICE, DW
论文数:
0
引用数:
0
h-index:
0
RICE, DW
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
ADAMS, AC
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(07)
: 809
-
812
[2]
TAPERED WINDOWS IN SIO2, SI3N4, AND POLYSILICON LAYERS BY ION-IMPLANTATION
GOTZLICH, J
论文数:
0
引用数:
0
h-index:
0
GOTZLICH, J
RYSSEL, H
论文数:
0
引用数:
0
h-index:
0
RYSSEL, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(03)
: 617
-
619
[3]
NITROGEN ION-IMPLANTATION INTO SIO2
GUPTA, SC
论文数:
0
引用数:
0
h-index:
0
GUPTA, SC
SHARMA, BL
论文数:
0
引用数:
0
h-index:
0
SHARMA, BL
AGASHE, VV
论文数:
0
引用数:
0
h-index:
0
AGASHE, VV
SURFACE TECHNOLOGY,
1980,
10
(02):
: 153
-
155
[4]
ION-IMPLANTATION EFFECTS IN NONCRYSTALLINE SIO2
ARNOLD, GW
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
ARNOLD, GW
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(06)
: 220
-
223
[5]
LUMINESCENCE EXCITED IN SIO2 DURING ION-IMPLANTATION
ABUHASSAN, LH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY, DEPT ELECTR ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
UNIV SURREY, DEPT ELECTR ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
ABUHASSAN, LH
TOWNSEND, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY, DEPT ELECTR ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
UNIV SURREY, DEPT ELECTR ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
TOWNSEND, PD
WEBB, RP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY, DEPT ELECTR ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
UNIV SURREY, DEPT ELECTR ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
WEBB, RP
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
1987,
19-20
: 927
-
930
[6]
ION-IMPLANTATION INDUCED STOICHIOMETRIC IMBALANCE IN SIO2
OFFENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
Technical Univ Aachen, Aachen, West Ger, Technical Univ Aachen, Aachen, West Ger
OFFENBERG, M
BALK, P
论文数:
0
引用数:
0
h-index:
0
机构:
Technical Univ Aachen, Aachen, West Ger, Technical Univ Aachen, Aachen, West Ger
BALK, P
APPLIED SURFACE SCIENCE,
1987,
30
(1-4)
: 265
-
271
[7]
PREPARATION OF FE NANOCRYSTALLINE IN SIO2 BY ION-IMPLANTATION
ZHANG, GL
论文数:
0
引用数:
0
h-index:
0
机构:
Shanghai Institute of Nuclear Research, Academia Sinica
ZHANG, GL
LIU, WH
论文数:
0
引用数:
0
h-index:
0
机构:
Shanghai Institute of Nuclear Research, Academia Sinica
LIU, WH
XU, F
论文数:
0
引用数:
0
h-index:
0
机构:
Shanghai Institute of Nuclear Research, Academia Sinica
XU, F
HU, WX
论文数:
0
引用数:
0
h-index:
0
机构:
Shanghai Institute of Nuclear Research, Academia Sinica
HU, WX
APPLIED PHYSICS LETTERS,
1992,
61
(21)
: 2527
-
2529
[8]
COMPENSATION OF MOBILE-ION MOVEMENT IN SIO2 BY ION-IMPLANTATION
TOPICH, JA
论文数:
0
引用数:
0
h-index:
0
TOPICH, JA
APPLIED PHYSICS LETTERS,
1978,
33
(11)
: 967
-
969
[9]
OXIDE CHARGE TRAPPING INDUCED BY ION-IMPLANTATION IN SIO2
HARARI, E
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540
PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540
HARARI, E
ROYCE, BSH
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540
PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540
ROYCE, BSH
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(06)
: 288
-
292
[10]
DYNAMICS OF DEFECT CREATION BY ION-IMPLANTATION IN THERMAL SIO2
DEVINE, RAB
论文数:
0
引用数:
0
h-index:
0
DEVINE, RAB
GOLANSKI, A
论文数:
0
引用数:
0
h-index:
0
GOLANSKI, A
JOURNAL OF APPLIED PHYSICS,
1984,
55
(07)
: 2738
-
2740
←
1
2
3
4
5
→