ION-IMPLANTATION EFFECTS IN NONCRYSTALLINE SIO2

被引：128

作者：

ARNOLD, GW ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：220 / 223

页数：4

共 50 条

[1] NITROGEN ION-IMPLANTATION INTO SIO2
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[2] TAPERED WINDOWS IN SIO2 BY ION-IMPLANTATION
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[9] DYNAMICS OF DEFECT CREATION BY ION-IMPLANTATION IN THERMAL SIO2
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[10] ION-IMPLANTATION INDUCED DEFECTS IN SIO2 - THE APPLICABILITY OF THE POSITRON PROBE
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