OXIDE CHARGE TRAPPING INDUCED BY ION-IMPLANTATION IN SIO2

被引：22

|

作者：

HARARI, E ^{[1
]}

ROYCE, BSH ^{[1
]}

机构：

[1] PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：288 / 292

页数：5

相关论文

共 50 条

[1] ION-IMPLANTATION INDUCED STOICHIOMETRIC IMBALANCE IN SIO2
OFFENBERG, M
BALK, P
APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 265 - 271
[2] NITROGEN ION-IMPLANTATION INTO SIO2
GUPTA, SC
SHARMA, BL
AGASHE, VV
SURFACE TECHNOLOGY, 1980, 10 (02): : 153 - 155
[3] ELECTRICAL CHARGE IN SIO2 RESULTING FROM ION-IMPLANTATION OF BORON
YOUNG, DR
BLACHMAN, AG
JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 859 - 859
[4] TAPERED WINDOWS IN SIO2 BY ION-IMPLANTATION
MOLINE, RA
BUCKLEY, RR
HASZKO, SE
MACRAE, AU
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 840 - 840
[5] ION-IMPLANTATION EFFECTS IN NONCRYSTALLINE SIO2
ARNOLD, GW
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) : 220 - 223
[6] ION-IMPLANTATION INDUCED DEFECTS IN SIO2 - THE APPLICABILITY OF THE POSITRON PROBE
FUJINAMI, M
CHILTON, NB
APPLIED PHYSICS LETTERS, 1993, 62 (10) : 1131 - 1133
[7] LUMINESCENCE EXCITED IN SIO2 DURING ION-IMPLANTATION
ABUHASSAN, LH
TOWNSEND, PD
WEBB, RP
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 927 - 930
[8] PREPARATION OF FE NANOCRYSTALLINE IN SIO2 BY ION-IMPLANTATION
ZHANG, GL
LIU, WH
XU, F
HU, WX
APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2527 - 2529
[9] COMPENSATION OF MOBILE-ION MOVEMENT IN SIO2 BY ION-IMPLANTATION
TOPICH, JA
APPLIED PHYSICS LETTERS, 1978, 33 (11) : 967 - 969
[10] DYNAMICS OF DEFECT CREATION BY ION-IMPLANTATION IN THERMAL SIO2
DEVINE, RAB
GOLANSKI, A
JOURNAL OF APPLIED PHYSICS, 1984, 55 (07) : 2738 - 2740

← 1 2 3 4 5 →