OXIDE CHARGE TRAPPING INDUCED BY ION-IMPLANTATION IN SIO2

被引：22
|
作者：
HARARI, E [1 ]
ROYCE, BSH [1 ]
机构：
[1] PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期
关键词：
D O I：
10.1109/TNS.1973.4327409
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：288 / 292
页数：5
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