ION-IMPLANTATION EFFECTS IN NONCRYSTALLINE SIO2

被引：128
|
作者：
ARNOLD, GW [1 ]
机构：
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期
关键词：
D O I：
10.1109/TNS.1973.4327397
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：220 / 223
页数：4
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