RF MEASUREMENTS AND CHARACTERIZATION OF HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AT LOW-TEMPERATURES

被引：6

作者：

BROCKERHOFF, W ^{[1
]}

MESCHEDE, H ^{[1
]}

PROST, W ^{[1
]}

HEIME, K ^{[1
]}

WEIMANN, G ^{[1
]}

SCHLAPP, W ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST FTZ,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 09期

关键词：

D O I：

10.1109/22.32221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1380 / 1388

页数：9

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