RF MEASUREMENTS AND CHARACTERIZATION OF HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AT LOW-TEMPERATURES

被引：6

作者：

BROCKERHOFF, W ^{[1
]}

MESCHEDE, H ^{[1
]}

PROST, W ^{[1
]}

HEIME, K ^{[1
]}

WEIMANN, G ^{[1
]}

SCHLAPP, W ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST FTZ,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 09期

关键词：

D O I：

10.1109/22.32221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1380 / 1388

页数：9

共 50 条

[21] Uniform Strain in Heterostructure Tunnel Field-Effect Transistors
Verreck, Devin
Verhulst, Anne S.
Van de Put, Maarten L.
Soree, Bart
Collaert, Nadine
Mocuta, Anda
Thean, Aaron
Groeseneken, Guido
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (03) : 337 - 340
[22] ELECTRON VELOCITY SATURATION IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
HAN, CJ
RUDEN, PP
NOHAVA, TE
NARUM, DH
GRIDER, DE
NEWSTROM, K
JOSLYN, P
SHUR, MS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 530 - 535
[23] Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
刘艳
林兆军
吕元杰
崔鹏
付晨
韩瑞龙
霍宇
杨铭
Chinese Physics B, 2017, (09) : 393 - 399
[24] Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
Liu, Yan
Lin, Zhao-Jun
Lv, Yuan-Jie
Cui, Peng
Fu, Chen
Han, Ruilong
Huo, Yu
Yang, Ming
CHINESE PHYSICS B, 2017, 26 (09)
[25] Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors
Kayis, Cemil
Zhu, C. Y.
Wu, Mo
Li, Xing
Ozgur, Umit
Morkoc, Hadis
GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011, 7939
[26] EFFECT OF A MAGNETIC-FIELD ON THE GATE CURRENT IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
CHEN, YJ
DAHLBERG, ED
SHUR, M
AKINWANDE, A
APPLIED PHYSICS LETTERS, 1990, 56 (20) : 2028 - 2030
[27] PHYSICAL LIMITS OF HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AND POSSIBILITIES OF NOVEL QUANTUM FIELD-EFFECT DEVICES
SAKAKI, H
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1845 - 1852
[28] Measurements of Enzyme Activity with Field-Effect Transistors
Guros, Nicholas
Le, Son T.
Cardone, Antonio
Sperling, Brent
Richter, Curt
Klauda, Jeffery
Pant, Harish
Balijepalli, Arvind
BIOPHYSICAL JOURNAL, 2018, 114 (03) : 226A - 226A
[29] NOISE MEASUREMENTS ON JUNCTION FIELD-EFFECT TRANSISTORS
PALLOTTINO, GV
ZIRIZZOTTI, AE
REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (01): : 212 - 220
[30] InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors
Borg, B. Mattias
Dick, Kimberly A.
Ganjipour, Bahram
Pistol, Mats-Erik
Wernersson, Lars-Erik
Thelander, Claes
NANO LETTERS, 2010, 10 (10) : 4080 - 4085

← 1 2 3 4 5 →