RF MEASUREMENTS AND CHARACTERIZATION OF HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AT LOW-TEMPERATURES

被引：6
|
作者：
BROCKERHOFF, W [1 ]
MESCHEDE, H [1 ]
PROST, W [1 ]
HEIME, K [1 ]
WEIMANN, G [1 ]
SCHLAPP, W [1 ]
机构：
[1] DEUTSCH BUNDESPOST FTZ,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 09期
关键词：
D O I：
10.1109/22.32221
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1380 / 1388
页数：9
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