NONLOCAL CALCULATION OF TRANSFER AND IVC OF HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

被引:0
|
作者
KAMINSKII, VE
机构
来源
SOVIET MICROELECTRONICS | 1988年 / 17卷 / 05期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:235 / 240
页数:6
相关论文
共 50 条
  • [1] ORGANIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    DODABALAPUR, A
    KATZ, HE
    TORSI, L
    HADDON, RC
    SCIENCE, 1995, 269 (5230) : 1560 - 1562
  • [2] HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN BY MOVPE
    HEUKEN, M
    MICROELECTRONIC ENGINEERING, 1992, 18 (1-2) : 33 - 55
  • [3] VELOCITY SATURATION EFFECT IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    HAN, CJ
    RUDEN, PP
    NOHAVA, T
    NARUM, D
    GRIDER, D
    NEWSTROM, K
    JOSLYN, P
    SHUR, M
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 121 - 124
  • [4] A NEW ANALYTICAL MODEL FOR HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    GRINBERG, AA
    SHUR, M
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) : 2116 - 2120
  • [5] MECHANISM OF NEGATIVE TRANSCONDUCTANCE IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    BAEK, J
    SHUR, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (08) : 1917 - 1921
  • [6] IMPACT OF INTERFACE IMPURITIES ON HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    REYNOLDS, CL
    VUONG, THH
    PETICOLAS, LJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2459 - 2464
  • [7] Uniform Strain in Heterostructure Tunnel Field-Effect Transistors
    Verreck, Devin
    Verhulst, Anne S.
    Van de Put, Maarten L.
    Soree, Bart
    Collaert, Nadine
    Mocuta, Anda
    Thean, Aaron
    Groeseneken, Guido
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (03) : 337 - 340
  • [8] ELECTRON VELOCITY SATURATION IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    HAN, CJ
    RUDEN, PP
    NOHAVA, TE
    NARUM, DH
    GRIDER, DE
    NEWSTROM, K
    JOSLYN, P
    SHUR, MS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 530 - 535
  • [9] TRANSFER CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS
    BOSENBERG, WA
    RCA REVIEW, 1963, 24 (04): : 687 - 704
  • [10] EFFECT OF A MAGNETIC-FIELD ON THE GATE CURRENT IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    CHEN, YJ
    DAHLBERG, ED
    SHUR, M
    AKINWANDE, A
    APPLIED PHYSICS LETTERS, 1990, 56 (20) : 2028 - 2030