NONLOCAL CALCULATION OF TRANSFER AND IVC OF HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

被引:0
|
作者
KAMINSKII, VE
机构
来源
SOVIET MICROELECTRONICS | 1988年 / 17卷 / 05期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:235 / 240
页数:6
相关论文
共 50 条
  • [41] Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
    Lv, Yuanjie
    Lin, Zhaojun
    Zhang, Yu
    Meng, Lingguo
    Luan, Chongbiao
    Cao, Zhifang
    Chen, Hong
    Wang, Zhanguo
    APPLIED PHYSICS LETTERS, 2011, 98 (12)
  • [42] Calculation of the response of field-effect transistors to charged biological molecules
    Landheer, Dolf
    McKinnon, W. Ross
    Aers, Geof
    Jiang, Weihong
    Deen, M. Jamal
    Shinwari, M. Wateed
    IEEE SENSORS JOURNAL, 2007, 7 (9-10) : 1233 - 1242
  • [43] CALCULATION OF THE PARAMETERS OF FIELD-EFFECT TRANSISTORS IN OPERATIONAL AMPLIFIERS.
    Rysin, V.S.
    Zaplotynskii, B.A.
    Zabroda, A.M.
    Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z, 1985, 28 (07): : 40 - 44
  • [44] FIELD-EFFECT TRANSISTORS
    MILNES, AG
    IEEE SPECTRUM, 1966, 3 (02) : 156 - &
  • [45] FIELD-EFFECT TRANSISTORS
    SMITH, AJ
    JOURNAL OF SCIENTIFIC INSTRUMENTS, 1966, 43 (03): : 204 - &
  • [46] FIELD-EFFECT TRANSISTORS
    SPINULES.I
    STANESCU, C
    DRAGHICI, I
    STUDII SI CERCETARI DE FIZICA, 1972, 24 (01): : 115 - +
  • [47] FIELD-EFFECT TRANSISTORS
    WITTLING.H
    JOURNAL OF THE SOCIETY OF MOTION PICTURE & TELEVISION ENGINEERS, 1965, 74 (09): : 858 - +
  • [48] FIELD-EFFECT TRANSISTORS
    CAVE, KJS
    WILSON, BLH
    SCIENCE PROGRESS, 1977, 64 (255) : 323 - 339
  • [49] Photoelectric Memory Effect in Graphene Heterostructure Field-Effect Transistors Based on Dual Dielectrics
    Choi, Hyun Ho
    Park, Jaesung
    Huh, Sung
    Lee, Seong Kyu
    Moon, Byungho
    Han, Sang Woo
    Hwang, Chanyong
    Cho, Kilwon
    ACS PHOTONICS, 2018, 5 (02): : 329 - 336
  • [50] Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors
    Cui, Peng
    Lv, Yuanjie
    Lin, Zhaojun
    Fu, Chen
    Liu, Yan
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (12)