EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS

被引：154

|

作者：

GROVE, AS

LEISTIKO, O

HOOPER, WW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 03期

关键词：

D O I：

10.1109/T-ED.1967.15916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：157 / +

页数：1

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