CALCULATION OF AVALANCHE BREAKDOWN VOLTAGES OF SILICON P-N JUNCTIONS

被引：168

作者：

FULOP, W

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 01期

关键词：

D O I：

10.1016/0038-1101(67)90111-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：39 / &

共 50 条

[1] AVALANCHE BREAKDOWN OF DIFFUSED SILICON P-N JUNCTIONS
KOKOSA, RA
DAVIES, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 874 - +
[2] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
SUNOHARA, Y
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
[3] RELATIONSHIP BETWEEN DEFECTS IN SILICON AND AVALANCHE BREAKDOWN OF P-N JUNCTIONS
EVSEEV, YA
MAGDEN, IN
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CHELNOKO.VE
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1266 - &
[4] EXPERIMENTAL STUDY OF AVALANCHE BREAKDOWN IN SILICON PLANAR P-N JUNCTIONS
WILSON, PR
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1483 - &
[5] Local Current Measurements for Avalanche Breakdown in Silicon p-n Junctions
Ding, Y.
Poenar, D. P.
Isakov, D. V.
[J]. 2012 19TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2012,
[6] AVALANCHE-THERMAL BREAKDOWN OF P-N JUNCTIONS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 899 - +
[7] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
HALL, R
LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &
[8] AVALANCHE BREAKDOWN IN EPITAXIAL SIC P-N JUNCTIONS
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VRAKKING, J
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2320 - +
[9] AVALANCHE BREAKDOWN VOLTAGES OF SELECTIVELY DIFFUSED P-N JUNCTION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (03) : 328 - &
[10] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS
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ABRAHAM, A
[J]. PHYSICAL REVIEW, 1957, 108 (04): : 936 - 937

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