An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications

被引：0

作者：

Houk, Yuri ^{[1
]}

Iniguez, Benjamin ^{[2
]}

Flandre, Denis ^{[3
]}

Nazarov, Alexei ^{[1
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] URV, Tarragona 43007, Catalonia, Spain

[3] UCL, B-1348 Louvain La Neuve, Belgium

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2006年 / 9卷 / 01期

关键词：

high-temperature electronics; AM SOI pMOSFET; C-infinity -continuous model;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operation regimes of the transistor. This model is valid for all regimes of normal operation, demonstrates proper description of high-temperature behavior of the subthreshold and off-state current. The model characteristics show a good agreement with the experimental data for temperatures up to 300 degrees C.

引用

页码：43 / 54

页数：12

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