An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications

被引：0

作者：

Houk, Yuri ^{[1
]}

Iniguez, Benjamin ^{[2
]}

Flandre, Denis ^{[3
]}

Nazarov, Alexei ^{[1
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] URV, Tarragona 43007, Catalonia, Spain

[3] UCL, B-1348 Louvain La Neuve, Belgium

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2006年 / 9卷 / 01期

关键词：

high-temperature electronics; AM SOI pMOSFET; C-infinity -continuous model;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operation regimes of the transistor. This model is valid for all regimes of normal operation, demonstrates proper description of high-temperature behavior of the subthreshold and off-state current. The model characteristics show a good agreement with the experimental data for temperatures up to 300 degrees C.

引用

页码：43 / 54

页数：12

共 50 条

[21] High Temperature Influence on Analog Parameters of Bulk and SOI nFinFETs
Oliveira, A. V.
Agopian, P. G. D.
Martino, J. A.
Simoen, E.
Claeys, C.
2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2015, : 293 - 296
[22] High Temperature Submicron SOI CMOS Technology Characterization for Analog and Digital Applications up to 300°C
Petrosyants, Konstantin O.
Lebedev, Sergey V.
Sambursky, Lev M.
Stakhin, Veniamin G.
Kharitonov, Igor A.
Ismail-zade, Mamed R.
Ignatov, Pavel V.
2017 THIRTY-THIRD ANNUAL SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM (SEMI-THERM), 2017, : 229 - 234
[23] DAMAGE ACCUMULATION IN HIGH-TEMPERATURE FATIGUE
COLLINS, ALW
TAPLIN, DMR
JOURNAL OF METALS, 1979, 31 (08): : F51 - F51
[24] High-temperature analog instrumentation system in thin-film fully-depleted SOI CMOS technology
Demeus, L
Viviani, A
Flandre, D
1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE, 1998, : 51 - 54
[25] Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperatures
Pavanello, MA
Martino, JA
PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1999, 99 (03): : 201 - 206
[26] High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model
Xu, Lida
Gao, Linchun
Ni, Tao
Wang, Juanjuan
Cao, Zewen
Li, Yifan
Li, Xueqin
Wang, Runjian
Li, Xiaojing
Yan, Weiwei
Bu, Jianhui
Li, Duoli
Zeng, Chuanbin
Li, Bo
Luo, Jiajun
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (09) : 4786 - 4792
[27] Mode of Superfluid Condensation in the High-Temperature Superconductors and Its Implications for Their Applications in High Fields
Guy Deutscher
Journal of Superconductivity, 2004, 17 : 85 - 88
[28] ANALYTICAL TECHNIQUES IN HIGH-TEMPERATURE CORROSION
GRAHAM, MJ
HUSSEY, RJ
OXIDATION OF METALS, 1995, 44 (1-2): : 339 - 374
[29] Mode of superfluid condensation in the high-temperature superconductors and its implications for their applications in high fields
Deutscher, G
JOURNAL OF SUPERCONDUCTIVITY, 2004, 17 (01): : 85 - 88
[30] COATINGS FOR HIGH-TEMPERATURE APPLICATIONS
GRUNLING, HW
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1984, 319 (6-7): : 753 - 757

← 1 2 3 4 5 →