Hydrogen and high-temperature charge instability of SOI structures and mosfets

被引：0
|
作者：
Nazarov, AN [1 ]
机构：
[1] Natl Acad Sci Ukraine, Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES OPERATING IN A HARSH ENVIRONMENT | 2005年 / 185卷
关键词：
hydrogen; charge instability; silicon-on-insulator; SiO2-Si structures; buried oxide; gate oxide; SOI MOSFET;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper surveys the hydrogen behavior (trapping, diffusion and generation) in gate and buried oxides in Metal-Oxide-Silicon (MOS) and Silicon-On-Insulator (SOI) structures and MOSFETs. New phenomena relating to proton generation in buried oxide (BOX) of SOI structures and MOSFETs during high-temperature hydrogen annealing and bias-temperature (BT) stress are considered. Analysis of the high-temperature charge instability, which is created at BT stress in the BOX is performed. The model of proton defect-assisted generation in the BOX due to temperature and negative bias stress is presented.
引用
收藏
页码：121 / 132
页数：12
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