Hydrogen and high-temperature charge instability of SOI structures and mosfets

This paper surveys the hydrogen behavior (trapping, diffusion and generation) in gate and buried oxides in Metal-Oxide-Silicon (MOS) and Silicon-On-Insulator (SOI) structures and MOSFETs. New phenomena relating to proton generation in buried oxide (BOX) of SOI structures and MOSFETs during high-temperature hydrogen annealing and bias-temperature (BT) stress are considered. Analysis of the high-temperature charge instability, which is created at BT stress in the BOX is performed. The model of proton defect-assisted generation in the BOX due to temperature and negative bias stress is presented.