DETERMINATION OF INTERFACIAL STRESS DURING THERMAL-OXIDATION OF SILICON

被引：14

|

作者：

MURRAY, P

CAREY, GF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.342592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3667 / 3670

页数：4

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