DETERMINATION OF INTERFACIAL STRESS DURING THERMAL-OXIDATION OF SILICON

被引：14
|
作者：
MURRAY, P
CAREY, GF
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期
关键词：
D O I：
10.1063/1.342592
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：3667 / 3670
页数：4
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