SILICON OXIDATION STUDIES - SILICON ORIENTATION EFFECTS ON THERMAL-OXIDATION

被引：78
|
作者：
IRENE, EA
MASSOUD, HZ
TIERNEY, E
机构：
[1] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27706
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 06期
关键词：
D O I：
10.1149/1.2108829
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1253 / 1256
页数：4
相关论文
共 50 条
  • [1] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION
    IRENE, EA
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5416 - 5420
  • [2] THERMAL-OXIDATION OF SILICON
    HESS, DW
    [J]. CHEMICAL ENGINEERING EDUCATION IN A CHANGING ENVIRONMENT, 1988, : 349 - 360
  • [3] THERMAL-OXIDATION OF SILICON
    MARSHALL, S
    [J]. SOLID STATE TECHNOLOGY, 1981, 24 (06) : 71 - 71
  • [4] THE THERMAL-OXIDATION OF SILICON
    DEAL, BE
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C101 - C101
  • [5] SIMULATION OF SILICON THERMAL-OXIDATION
    LEE, CM
    [J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2793 - 2798
  • [6] MODELING OF THERMAL-OXIDATION OF SILICON
    SINGH, SK
    SCHLUP, JR
    FAN, LT
    SUR, B
    [J]. INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 1988, 27 (09) : 1707 - 1714
  • [7] RAPID THERMAL-OXIDATION OF SILICON
    ANG, ST
    WORTMAN, JJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) : 2361 - 2362
  • [8] RAPID THERMAL-OXIDATION OF SILICON
    MOSLEHI, MM
    SHATAS, SC
    SARASWAT, KC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C101 - C101
  • [9] THERMAL-OXIDATION OF SILICIDES ON SILICON
    DHEURLE, FM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C134 - C134
  • [10] THERMAL-OXIDATION OF SILICIDES ON SILICON
    DHEURLE, FM
    CROS, A
    FRAMPTON, RD
    IRENE, EA
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02): : 291 - 308
12345