LIGHT-BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL-ACTIVITY OF STACKING-FAULTS IN CZ SILICON

被引：0

作者：

CASTALDINI, A ^{[1
]}

CAVALLINI, A ^{[1
]}

POGGI, A ^{[1
]}

SUSI, E ^{[1
]}

机构：

[1] CNR,LAMEL INST,I-40126 BOLOGNA,ITALY

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 06期

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D O I：

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中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：169 / 169

页数：1

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