LIGHT-BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL-ACTIVITY OF STACKING-FAULTS IN CZ SILICON

被引：0

作者：

CASTALDINI, A ^{[1
]}

CAVALLINI, A ^{[1
]}

POGGI, A ^{[1
]}

SUSI, E ^{[1
]}

机构：

[1] CNR,LAMEL INST,I-40126 BOLOGNA,ITALY

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：169 / 169

页数：1

共 50 条

[41] LASER-ENHANCED NUCLEATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
HAYAFUJI, Y
OGAWA, J
AOKI, Y
SHIBATA, A
USUI, S
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3606 - 3608
[42] ELECTRON-BEAM INDUCED CURRENT AND CATHODOLUMINESCENCE STUDY OF THE RECOMBINATION ACTIVITY OF STACKING-FAULTS AND HILLOCKS IN HYDRIDE VAPOR-PHASE EPITAXY INP
ATTOLINI, G
FRIGERI, C
PELOSI, C
SALVIATI, G
APPLIED PHYSICS LETTERS, 1986, 49 (03) : 167 - 169
[43] INFLUENCE OF ANNEALING AMBIENT ON THE SHRINKAGE KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
CLAEYS, CL
DECLERCK, GJ
VANOVERSTRAETEN, RJ
APPLIED PHYSICS LETTERS, 1979, 35 (10) : 797 - 799
[44] RADIATIVE ELECTRONIC-TRANSITIONS ASSOCIATED WITH OXYGEN-INDUCED STACKING-FAULTS IN SILICON
EVANS, JH
KANIEWSKI, J
KANIEWSKA, M
RIMMER, JS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) : A41 - A44
[45] SURFACE VERSUS BULK NUCLEATED OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS
ROZGONYI, GA
SEIDEL, TE
JOURNAL OF CRYSTAL GROWTH, 1977, 38 (03) : 359 - 363
[46] ROLE OF POINT-DEFECTS IN GROWTH OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
MURARKA, SP
PHYSICAL REVIEW B, 1977, 16 (06): : 2849 - 2857
[47] EFFECT OF APPLIED STRESS ON OXIDATION-INDUCED STACKING-FAULTS IN SILICON-CRYSTALS
DEMER, LJ
CHANG, YM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C142 - C142
[48] OXIDATION-INDUCED STACKING-FAULTS IN HF-TREATED SILICON-CRYSTALS
CHANG, YM
DEMER, LJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C140 - C141
[49] MINORITY AND MAJORITY CARRIER TRAPS ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON
EVANS, JH
DAVIDSON, JA
SARITAS, M
VANDINI, M
QIAN, Y
PEAKER, AR
MATERIALS SCIENCE AND TECHNOLOGY, 1995, 11 (07) : 696 - 701
[50] INFLUENCE OF PHOSPHORUS DIFFUSION ON GROWTH KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
CLAEYS, CL
DECLERCK, GJ
VANOVERSTRAETEN, RJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C141 - C141

← 1 2 3 4 5 →