共 50 条
- [41] MAGNETIC-SUSCEPTIBILITY AND ELECTRICAL PROPERTIES OF P-TYPE PB0.65SN0.35TE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 929 - 932
- [43] NOISE, ENERGY RELAXATION-TIME, AND DIFFUSION OF HOT HOLES IN P-TYPE GE IN A MAGNETIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 210 - 214
- [44] DEPENDENCE OF ELECTRICAL-CONDUCTIVITY OF P-TYPE GE IN A STRONG MAGNETIC-FIELD ON DEFORMATION POTENTIAL CONSTANTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1185 - 1188
- [46] Lateral conductivity of p-type doped Si/Ge island structures Semiconductors, 2007, 41 : 818 - 821
- [47] The effect of Ge doping on p-type Higher Manganese Silicides (HMS) XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02, 2002, : 90 - 93
- [48] ODD MAGNETORESISTANCE OF P-TYPE GE IN STRONG ELECTRIC-FIELDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 965 - 967
- [49] The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe RSC ADVANCES, 2016, 6 (115): : 114825 - 114829
- [50] LONGITUDINAL NERNST-ETTINGSHAUSEN EFFECT IN P-TYPE GE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1334 - +