MAGNETIC SUSCEPTIBILITY OF P-TYPE GE

被引:9
|
作者
BOWERS, R
YAFET, Y
机构
来源
PHYSICAL REVIEW | 1960年 / 120卷 / 01期
关键词
D O I
10.1103/PhysRev.120.62
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:62 / 66
页数:5
相关论文
共 50 条
  • [31] Analysis of the Heat Characteristics of the p-Type Ge Single Crystals
    Malyshkina O.V.
    Kaplunov I.A.
    Fokina V.Y.
    Bulletin of the Russian Academy of Sciences: Physics, 2018, 82 (5) : 578 - 580
  • [32] p-type conduction in ion-implanted amorphized Ge
    Romano, L.
    Impellizzeri, G.
    Grimaldi, M. G.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (06) : 703 - 706
  • [33] INVESTIGATION OF THE OPTICAL COOLING AND HEATING OF HOLES IN P-TYPE GE
    DEDULEVICH, S
    KANTSLERIS, Z
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (03): : 266 - 270
  • [34] Phonon bottleneck in p-type Ge/Si quantum dots
    Yakimov, A. I.
    Kirienko, V. V.
    Armbrister, V. A.
    Bloshkin, A. A.
    Dvurechenskii, A. V.
    APPLIED PHYSICS LETTERS, 2015, 107 (21)
  • [35] INFLUENCE OF COMPENSATION OF IMPURITIES ON ELECTRIC BREAKDOWN IN P-TYPE GE
    BANNAYA, VF
    VESELOVA, LI
    GERSHENZON, EM
    GURVICH, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 271 - 274
  • [36] MAGNETICALLY INDUCED CIRCULAR DRAG EFFECT IN P-TYPE GE
    LYANDAGELLER, YB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1088 - 1089
  • [37] HALL MEASUREMENT OF P-TYPE GE-SI ALLOYS
    ISHIDA, S
    OTSUKA, E
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 24 (03) : 509 - &
  • [38] PICOSECOND INFRARED STUDIES OF HOT HOLES IN P-TYPE GE
    WOERNER, M
    SCHUSTER, R
    ELSAESSER, T
    KAISER, W
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B638 - B640
  • [39] INFLUENCE OF LIGHT HOLES ON ANISOTROPY OF CONDUCTIVITY OF P-TYPE GE
    MITIN, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 932 - 933
  • [40] MAGNETIC INCOMMENSURABILITY IN p-TYPE CUPRATE PEROVSKITES
    Sherman, A.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2012, 26 (09):