MAGNETIC SUSCEPTIBILITY OF P-TYPE GE

被引:9
|
作者
BOWERS, R
YAFET, Y
机构
来源
PHYSICAL REVIEW | 1960年 / 120卷 / 01期
关键词
D O I
10.1103/PhysRev.120.62
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:62 / 66
页数:5
相关论文
共 50 条
  • [21] INFLUENCE OF MAGNETOIMPURITY RESONANCES ON THE PHOTOCONDUCTIVITY OF P-TYPE GE
    SHOVKUN, DV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 992 - 995
  • [22] INTERPRETATION OF PHENOMENON OF FIELD EMISSION IN P-TYPE GE
    SHLYAKHT.PG
    SOVIET PHYSICS SOLID STATE,USSR, 1970, 11 (08): : 1794 - +
  • [23] Spin-splitting in p-type Ge devices
    Holmes, S. N.
    Newton, P. J.
    Llandro, J.
    Mansell, R.
    Barnes, C. H. W.
    Morrison, C.
    Myronov, M.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (08)
  • [24] INVESTIGATION OF THE HALL-EFFECT IN P-TYPE GE
    GUTSUL, IV
    KIRIAS, IG
    LITOVCHENKO, PG
    MARUSYAK, VI
    NITSOVICH, VM
    OSTAPOV, SE
    PETROSYAN, EE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (07): : 734 - 737
  • [25] RECOMBINATION PROPERTIES OF IMPURITY CENTERS IN P-TYPE GE
    BESFAMILNAYA, VA
    OSTROBOR.VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 15 - +
  • [27] ELECTRONIC RAMAN-SCATTERING FROM P-TYPE GE
    COLWELL, PJ
    DOEHLER, J
    SOLIN, SA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 226 - 226
  • [28] Electrochemical pore etching in n- and p-type Ge
    Fang, Cheng
    Carstensen, Juergen
    Foell, Helmut
    NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2, 2007, 121-123 : 37 - 40
  • [29] QUANTUM EFFECTS IN CYCLOTRON RESONANCE IN P-TYPE INSB AND GE
    BUTTON, KJ
    LAX, B
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 432 - &
  • [30] THE EFFECT OF FAST NEUTRON BOMBARDMENT ON THE CONDUCTIVITY OF P-TYPE GE
    CLELAND, JW
    CRAWFORD, JH
    LARKHOROVITZ, K
    PIGG, JC
    PHYSICAL REVIEW, 1951, 82 (05): : 763 - 763