共 50 条
- [1] TEMPERATURE-DEPENDENCE OF RELAXATION-TIME OF HOLES IN P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1088 - 1088
- [2] INFLUENCE OF MAGNETIC-FIELD ON THE ENERGY RELAXATION-TIME IN N-TYPE GERMANIUM AND SILICON PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 97 (01): : K13 - K15
- [4] HEATING AND ENERGY RELAXATION-TIME OF ELECTRONS IN N-TYPE INSB IN A QUANTIZING MAGNETIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (05): : 568 - 573
- [6] INFLUENCE OF MAGNETIC-FIELD ON NOISE OF HOT HOLES IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 517 - 518
- [10] MAGNETIC-FIELD DEPENDENT RELAXATION-TIME IN P-INSB AT LOW-TEMPERATURES JOURNAL DE PHYSIQUE, 1981, 42 (NC5): : 689 - 693