HIGH-SPEED INGAASP/INGAASP MQW ELECTROABSORPTION MODULATOR WITH HIGH OPTICAL POWER HANDLING CAPACITY

被引：2
|
作者：
DEVAUX, F
BIGAN, E
OUGAZZADEN, A
HUET, F
CARRE, M
CARENCO, A
机构：
[1] CNET, 92220 Bagneux
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 23期
关键词：
OPTOELECTRONICS; OPTICAL MODULATION;
D O I：
10.1049/el:19921385
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-speed and static characteristics at high optical intensity of an InGaAsP/InGaAsP MQW electroabsorption modulator at 1.53 mum are investigated. When considering wavelength and device length, and allowing a bandwidth in excess of 20 GHz and 2 V drive voltage, the authors found that the static and large-signal dynamic performances do not change with 5.6 dBm of coupled optical power. This is the (highest optical power level that an electroabsorption modulator bulk or MQW) has ever been reported to handle without degradation.
引用
收藏
页码：2157 / 2159
页数：3
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