Structural optimization of InGaAsP/InP MQW electroabsorption waveguide modulator

被引：0
|
作者：
Kim, DG [1 ]
Lim, YS [1 ]
Choi, YW [1 ]
Lee, S [1 ]
Kim, SH [1 ]
Cho, YS [1 ]
Yi, JC [1 ]
机构：
[1] Chung Ang Univ, Dept Elect Engn, Optoelect & Opt Commun Lab, Dongjak Ku, Seoul 156756, South Korea
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII | 1999年 / 3625卷
关键词：
MQW; EAM; optical confinement factor;
D O I：
10.1117/12.356875
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Multiple quantum well (MQW) In1-xGaxAsyP1-y/InP electroabsorption waveguide modulators are systematically studied. Structural optimization of the MQW EAM is performed to determine the combination of the well width (L-z) and the Arsenic mole fraction Oil which yield a sufficiently large value of transmission change (Delta T) for a given applied field modulation (6 kV/cm for on-state absorption, 86 kV/cm for off-state absorption). In this process, we consider the change of the optical confinement factor as a function of the well width, mole fraction, and number of quantum wells. The device length (L) is also optimized to maximize the bandwidth.
引用
收藏
页码：189 / 197
页数：9
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